2010-01-25 page 1 SPB100N03S2-03G optimos tm? power-transistor product summary v ds 30 v r ds(on) max. smd version 3 mw i d 100 a feature n-channel enhancement mode excellent gate charge x r ds(on) product (fom) superior thermal resistance 175c operating temperature avalanche rated d v/d t rated; halogen free according to iec61249-2-21 p-to263 -3 marking pn0303 type package spb100n03s2-03 p- to263 -3 maximum ratings, at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current 1) t c =25c i d 100 100 a pulsed drain current t c =25c i d puls 400 avalanche energy, single pulse i d =80a, v dd =25v, r gs =25w e as 810 mj repetitive avalanche energy, limited by t jmax 2) e ar 30 reverse diode d v/d t i s =100a, v ds =24v, di/d t=200a/s, t jmax =175c dv/d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 300 w operating and storage temperature t j , t stg -55... +175 c iec climatic category; din iec 68-1 55/175/56
2010-01-25 page 2 SPB100N03S2-03G thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - 0.3 0.5 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - - 62 40 electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 30 - - v gate threshold voltage, v gs = v ds i d =250a v gs(th) 2.1 3 4 zero gate voltage drain current v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =10v, i d =80a v gs =10v, i d =80a, smd version r ds(on) - - 2.5 2.2 3.3 3 mw 1 current limited by bondwire ; with an r thjc = 0.5k/w the chip is able to carry i d = 233a at 25c, for detailed information see app.-note anps071e available at www.infineon.com/optimos 2 defined by design. not subject to production test. 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2010-01-25 page 3 SPB100N03S2-03G electrical characteristics parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 32*i d *r ds(on)max , i d =100a 71 142 - s input capacitance c iss v gs =0v, v ds =25v, f=1mhz - 5300 7020 pf output capacitance c oss - 2450 3200 reverse transfer capacitance c rss - 470 700 turn-on delay time t d(on) v dd =15v, v gs =10v, i d =100a, r g =2.2 w - 24 36 ns rise time t r - 40 60 turn-off delay time t d(off) - 44 66 fall time t f - 39 59 gate charge characteristics gate to source charge q gs v dd =24v, i d =100a - 26 34 nc gate to drain charge q gd - 45 68 gate charge total q g v dd =24v, i d =100a, v gs =0 to 10v - 113 150 gate plateau voltage v (plateau) v dd =24v, i d =100a - 5.6 - v reverse diode inverse diode continuous forward current i s t c =25c - - 100 a inv. diode direct current, pulsed i sm - - 400 inverse diode forward voltage v sd v gs =0v, i f =100a - 0.9 1.3 v reverse recovery time t rr v r =15v, i f =l s , di f /d t=100a/s - 79 100 ns reverse recovery charge q rr - 109 136 nc
2010-01-25 page 4 SPB100N03S2-03G 1 power dissipation p tot = f (t c ) parameter: v gs 3 6 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 40 80 120 160 200 240 w 320 spp100n03s2-03 p tot 2 drain current i d = f (t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 80 90 a 110 spp100n03s2-03 i d 4 max. transient thermal impedance z thjc = f (t p ) parameter : d = t p /t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spp100n03s2-03 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 1 10 2 10 3 10 a spp100n03s2-03 i d r ds(on) = v ds / i d 1 ms 100 s t p = 20.0 s
2010-01-25 page 5 SPB100N03S2-03G 5 typ. output characteristic i d = f (v ds ); t j =25c parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 20 40 60 80 100 120 140 160 180 200 a 240 spp100n03s2-03 i d v gs [v] a a 4.5 b b 4.8 c c 5.0 d d 5.2 e e 5.5 f f 5.8 g g 6.0 h h 7.0 i p tot = 300 w i 10.0 6 typ. drain-source on resistance r ds(on) = f (i d ) parameter: v gs 0 20 40 60 80 100 a 140 i d 0 1 2 3 4 5 6 7 8 9 w 11 spp100n03s2-03 r ds(on) v gs [v] = f f 5.8 g g 6.0 h h 7.0 i i 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 1 2 3 4 5 v 7 v gs 0 20 40 60 80 100 120 140 160 a 200 i d 8 typ. forward transconductance g fs = f(i d ); t j =25c parameter: g fs 0 20 40 60 80 100 120 140 160 a 200 i d 0 20 40 60 80 100 120 140 s 180 g fs
2010-01-25 page 6 SPB100N03S2-03G 9 drain-source on-state resistance r ds(on) = f (t j ) parameter : i d = 80 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 1 2 3 4 5 6 w 8 spp100n03s2-03 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f (t j ) parameter: v gs = v ds -60 -20 20 60 100 c 180 t j 0 0.5 1 1.5 2 2.5 3 v 4 v gs(th) 268 ma 1.34 ma 11 typ. capacitances c = f (v ds ) parameter: v gs =0v, f=1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 5 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , tp = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a spp100n03s2-03 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2010-01-25 page 7 SPB100N03S2-03G 13 typ. avalanche energy e as = f (t j ) par.: i d = 80 a, v dd = 25 v, r gs = 25 w 25 45 65 85 105 125 145 c 185 t j 0 100 200 300 400 500 600 700 mj 850 e as 14 typ. gate charge v gs = f (q gate ) parameter: i d = 100 a pulsed 0 20 40 60 80 100 120 140 nc 170 q gate 0 2 4 6 8 10 12 v 16 spp100n03s2-03 v gs 0,8 v ds max ds max v 0,2 15 drain-source breakdown voltage v (br)dss = f (t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 27 28 29 30 31 32 33 34 v 36 spp100n03s2-03 v (br)dss
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2010-01-25 page 9 SPB100N03S2-03G
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